Effects of interface morphology on Schottky-barrier heights: A case study on Al/GaAs(001)

摘要

The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any structural distortions on the metal side-including elongations of the metal-semiconductor bond (i.e., interface strain)-whereas it strongly depends on the interface structure on the semiconductor side. A rationale for these findings is given in terms of the interface dipole generated by the ionic effective charges.